Spatially resolved THz response as a characterization concept for nanowire FETs

TL;DR

This paper introduces a THz spectroscopy technique with a segmented multi-gate design to spatially resolve electronic spectra in nanowire FETs, enabling detailed quantum transition analysis beyond standard methods.

Contribution

The paper presents a novel THz probe method with a segmented gate design for local quantum transition detection in nanowire FETs, supported by quantum simulations.

Findings

Demonstrates the feasibility of spatially resolved THz response measurement.

Shows the technique can detect quantum transitions within the FET channel.

Simulations indicate capabilities surpassing standard characterization methods.

Abstract

In this paper, we propose a THz probe technique to obtain spatially resolved information about the electronic spectra inside nanowire-based FETs. This spectroscopic approach employs a segmented multi-gate design for the local detection of quantum transitions between few-electron states within the FET channel. We simulate the intra-band THz response of such devices by means of a many-body quantum approach, taking quantization and Coulomb interaction effects into account. The obtained simulation results demonstrate the capabilities of the proposed technique which go beyond the limitations of standard characterization methods.