Scattering of charge carriers by point defects in bilayer graphene

TL;DR

This paper develops a theory for how point defects scatter charge carriers in bilayer graphene, revealing that scattering cross-section depends on electron wavelength and affects mobility independently of electron concentration.

Contribution

It introduces a theoretical model for scattering in bilayer graphene, highlighting differences from single-layer graphene regarding defect relevance and mobility behavior.

Findings

Scattering cross-section is proportional to electron wavelength when wavelength exceeds defect size.

Mobility in bilayer graphene is independent of electron concentration due to defect scattering.

Both neutral and charged defects significantly influence resistivity in bilayer graphene.

Abstract

Theory of scattering of massive chiral fermions in bilayer graphene by radial symmetric potential is developed. It is shown that in the case when the electron wavelength is much larger than the radius of the potential the scattering cross-section is proportional to the electron wavelength. This leads to the mobility independent on the electron concentration. In contrast with the case of single-layer, neutral and charged defects are, in general, equally relevant for the resistivity of the bilayer graphene.