Determination of InN-GaN heterostructure band offsets from internal photoemission measurements

TL;DR

This paper experimentally determines the band offsets at the InN-GaN heterointerface using internal photoemission spectroscopy, providing precise measurements crucial for optoelectronic device design.

Contribution

The study introduces a method to accurately measure band offsets at the InN-GaN interface using internal photoemission, revealing specific offset values.

Findings

Valence band offset of 0.85 eV

Conduction band offset of 1.82 eV

Identification of two threshold energies in photocurrent

Abstract

Band discontinuities at the InN-GaN heterointerface are experimentally determined from internal photoemission spectroscopy measurements on n+ InN on GaN epilayers. The photocurrent shows two threshold energies, one at 1.624 eV and the other at 2.527 eV. From these we obtain the valence band offset 0.85 eV and the conduction band offset 1.82 eV.