Spin Effect on the Resonant Tunneling Characteristics of a Double-Barrier Heterostructures Under Longitudinal Stresses

TL;DR

This paper investigates how longitudinal stress influences the spin-dependent resonant tunneling in GaAs-Ga1-x AlxAs double-barrier heterostructures, revealing new insights into spintronic device behavior under mechanical stress.

Contribution

It introduces a theoretical model incorporating spin effects and external stress in resonant tunneling calculations, extending previous charge-only models to include spin considerations.

Findings

Spin-tunneling characteristics are significantly affected by external stress.

The model aligns with previous charge-based results but highlights spin-specific phenomena.

Stress can be used to modulate spin-dependent tunneling properties.

Abstract

Theoretical research on electronic properties in mesoscopic condensed matter systems has focused primarily on the electron charge freedom degrees, while its corresponding spin freedom degrees have not yet received the same attention. Nevertheless nowadays there has been an increment in the number of electron spin-related experiments showing unique possibilities for finding novel mechanisms of information processing and transmission, opening ample fields of opportunities in the theoretical developed of new models. In this spirit we have calculated the resonant tunneling characteristics curves in double-barrier heterostructures of GaAs-Ga1-x AlxAs under external stress and considering two charges with spin half. The resonant tunneling study has been carried out by means of the diagrammatic techniques for non equilibrium processes following the model proposed by Keldysh also a simple one-band tight-binding Hamiltonian is adopted in the theoretical framework. We have compared our results of the spin-tunneling with previous ones reported in literature.