Theory of New Quantum Oscillations in the Magnetoresistance of Graphene Layers

TL;DR

This paper introduces a theoretical framework predicting new quantum oscillations in graphene's magnetoresistance, which manifest as fine structures superimposed on known oscillations and can provide insights into sample quality and quantum effects.

Contribution

The paper presents a novel theory explaining previously overlooked fine structures in graphene's magnetoresistance as quantum oscillations, offering new spectroscopic methods.

Findings

Prediction of fine quantum oscillations in magnetoresistance

Correlation of oscillations with sample uniformity and defects

Explanation for absence of magnetoresistance in few-layer graphene

Abstract

We present a theory presenting new quantum oscillations in the magnetoresistance that are revealed as fine structures superimposed to the Schubnikov-de-Haas oscillations. They may be observed in experiments on graphene layers as fine structures that until now seem to have been overseen or considered to be noise. These oscillations appear also in the behaviour of the resistance as a function of the gate voltage that changes the number of carriers or Fermi level. Experimental studies of these resonances should give information of the uniformity and defects of the samples and represent a new fine structure spectroscopy. Also the lateral sample size and quantum effects may explain the absence of magnetoresistance in a few grapheme layers. Experiments are proposed.