Experimental realization of a silicon spin field-effect transistor

TL;DR

This paper demonstrates a silicon-based spin field-effect transistor that uses an electric field to control electron spin precession and transport, achieving significant current modulation with improved spin injection efficiency.

Contribution

It presents the first experimental realization of a silicon spin FET with enhanced spin injection and control of spin transport via electric fields.

Findings

Achieved ~115% magnetocurrent with hot-electron spin injector.

Demonstrated at least 38% electron spin polarization after 10 microns.

Realized current modulation controlled by electric field in silicon.

Abstract

A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin direction at the spin detector and hence the output collector current, this comprises a spin field-effect transistor. An improved hot-electron spin injector providing ~115% magnetocurrent, corresponding to at least ~38% electron current spin polarization after transport through 10 microns undoped single-crystal silicon, is used for maximum current modulation.