Dangling-bond spin relaxation and magnetic 1/f noise from the amorphous-semiconductor/oxide interface: Theory

TL;DR

This paper develops a theoretical model for magnetic noise caused by dangling-bond spin-flips at amorphous-semiconductor/oxide interfaces, explaining experimental data and predicting flux noise in SQUIDs, with implications for qubit coherence.

Contribution

The paper introduces a detailed spin-flip model for dangling-bond noise, linking microscopic parameters to experimental observations and device noise predictions.

Findings

Model fits experimental spin coherence data.

Estimated flux noise matches observed SQUID noise levels.

Surface passivation can suppress dangling-bond related noise.

Abstract

We propose a model for magnetic noise based on spin-flips (not electron-trapping) of paramagnetic dangling-bonds at the amorphous-semiconductor/oxide interface. A wide distribution of spin-flip times is derived from the single-phonon cross-relaxation mechanism for a dangling-bond interacting with the tunneling two-level systems of the amorphous interface. The temperature and frequency dependence is sensitive to three energy scales: The dangling-bond spin Zeeman energy delta, as well as the minimum (E_min) and maximum (E_max) values for the energy splittings of the tunneling two-level systems. We compare and fit our model parameters to a recent experiment probing spin coherence of antimony donors implanted in nuclear-spin-free silicon [T. Schenkel {\it et al.}, Appl. Phys. Lett. 88, 112101 (2006)], and conclude that a dangling-bond area density of the order of 10^{14}cm^{-2} is consistent with the data. This enables the prediction of single spin qubit coherence times as a function of the distance from the interface and the dangling-bond area density in a real device structure. We apply our theory to calculations of magnetic flux noise affecting SQUID devices due to their Si/SiO_2 substrate. Our explicit estimates of flux noise in SQUIDs lead to a noise spectral density of the order of 10^{-12}Phi_{0}^{2} {Hz}^{-1} at f=1Hz. This value might explain the origin of flux noise in some SQUID devices. Finally, we consider the suppression of these effects using surface passivation with hydrogen, and the residual nuclear-spin noise resulting from a perfect silicon-hydride surface.