Electronic Interface Reconstruction at Polar-Nonpolar Mott Insulator Heterojunctions

TL;DR

This paper presents a theoretical analysis of electronic interface reconstruction at polar-nonpolar Mott insulator heterojunctions, focusing on the conditions for 2D strongly-correlated electron systems formation and the influence of strong correlations on confinement.

Contribution

It derives a formula for the minimum polar layers needed for EIR and explores how system parameters and strong correlations affect interface properties.

Findings

Derived an expression for minimum polar layers for EIR

Identified key parameters controlling 2DSCES properties

Highlighted the role of strong correlations in confinement

Abstract

We report on a theoretical study of the electronic interface reconstruction (EIR) induced by polarity discontinuity at a heterojunction between a polar and a nonpolar Mott insulators, and of the two-dimensional strongly-correlated electron systems (2DSCESs) which accompany the reconstruction. We derive an expression for the minimum number of polar layers required to drive the EIR, and discuss key parameters of the heterojunction system which control 2DSCES properties. The role of strong correlations in enhancing confinement at the interface is emphasized.