Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots

TL;DR

This study investigates the polarized emission lines from excitonic complexes in single InGaN/GaN quantum dots, revealing complex spectra and polarization behaviors explained by electronic structure calculations involving A and B valence bands.

Contribution

It provides new insights into the polarization properties of emission lines in InGaN/GaN quantum dots through combined experimental and theoretical analysis.

Findings

Multiple emission lines observed per quantum dot.

Polarization aligned with specific crystal directions.

Theoretical explanation involving A and B valence band hole states.

Abstract

Cathodoluminescence measurements on single InGaN/GaN quantum dots (QDs) are reported. Complex spectra with up to five emission lines per QD are observed. The lines are polarized along the orthogonal crystal directions [1 1 -2 0] and [-1 1 0 0]. Realistic eight-band k.p electronic structure calculations show that the polarization of the lines can be explained by excitonic recombinations involving hole states which are either formed by the A or the B valence band.