Renormalization of hole-hole interaction at decreasing Drude conductivity
G.M. Minkov, A.A. Sherstobitov, A.V. Germanenko, O.E. Rut, and, B.N.Zvonkov
TL;DR
This paper investigates how hole-hole interaction corrections to conductivity evolve in GaAs/InGaAs/GaAs heterostructures as Drude conductivity decreases, revealing compensation effects and a reduced interaction prefactor.
Contribution
It demonstrates the combined effects of channel compensation and a reduced interaction prefactor on conductivity corrections at lower Drude conductivities.
Findings
Interaction correction changes due to channel compensation.
Emergence of a prefactor less than one in the correction expression.
Analysis specific to gated GaAs/InGaAs heterostructures.
Abstract
The diffusion contribution of the hole-hole interaction to the conductivity is analyzed in gated GaAs/InGaAs/GaAs heterostructures. We show that the change of the interaction correction to the conductivity with the decreasing Drude conductivity results both from the compensation of the singlet and triplet channels and from the arising prefactor in the conventional expression for the interaction correction.
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