Coherent defect-assisted multiphonon intraband carrier relaxation in semiconductor quantum dots

TL;DR

This paper proposes a new defect-assisted multiphonon relaxation mechanism in semiconductor quantum dots, explaining temperature-dependent intraband relaxation rates observed in PbSe and CdSe nanocrystals.

Contribution

It introduces a coherent superposition-based defect-assisted mechanism for multiphonon intraband relaxation in quantum dots, advancing understanding of carrier dynamics.

Findings

Explains temperature dependence of relaxation rates in PbSe and CdSe quantum dots.

Demonstrates the role of defect states in carrier relaxation processes.

Provides a theoretical framework matching experimental observations.

Abstract

new defect-assisted mechanism of multiphonon intraband carrier relaxation in semiconductor quantum dots, where the carrier is found in a coherent superposition of the initial, final, and defect states, is proposed. It is shown that this mechanism is capable of explaining the observed trends in temperature dependences of the intraband relaxation rates for PbSe and CdSe colloidal nanocrystal quantum dots.