Growth control of GaAs nanowires using pulsed laser deposition with arsenic over pressure

TL;DR

This study systematically investigates and optimizes the growth of GaAs nanowires using pulsed laser deposition with arsenic over pressure, achieving uniform, high-quality nanowires suitable for electronic applications.

Contribution

It introduces arsenic over pressure control via polycrystalline GaAs decomposition to precisely regulate nanowire growth and morphology, advancing nanowire fabrication techniques.

Findings

Achieved single-crystal GaAs nanowires over 20 μm in length

Controlled nanowire geometry through arsenic over pressure

Produced nanowires with uniform diameter and surface oxide layer

Abstract

Using pulsed laser ablation with arsenic over pressure, the growth conditions for GaAs nanowires have been systematically investigated and optimized. Arsenic over pressure with As$_2$ molecules was introduced to the system by thermal decomposition of polycrystalline GaAs to control the stoichiometry and shape of the nanowires during growth. GaAs nanowires exhibit a variety of geometries under varying arsenic over pressure, which can be understood by different growth processes via vapor-liquid-solid mechanism. Single-crystal GaAs nanowires with uniform diameter, lengths over 20 $\mu$m, and thin surface oxide layer were obtained and can potentially be used for further electronic characterization.