Reentrant Kondo effect in Landau quantized graphene

TL;DR

This paper investigates how Landau quantization affects the Kondo effect in graphene, revealing reentrant behavior driven by changes in chemical potential and the Landau level structure.

Contribution

It introduces the study of reentrant Kondo phenomena in Landau-quantized graphene using slave-boson mean-field theory, highlighting the impact of Landau levels and chemical potential.

Findings

Reentrant Kondo behavior observed with varying chemical potential.

Kondo resonance influenced by Landau level structure.

Density of states suppression between Landau levels.

Abstract

We have studied the interplay of an Anderson impurity in Landau quantized graphene, with special emphasis on the influence of the chemical potential. Within the slave-boson mean-field theory, we found reentrant Kondo behaviour by varying the chemical potential or gate voltage. Between Landau levels, the density of states is suppressed, and by changing the graphene's Fermi energy, we cross from metallic to semiconducting regions. Hence, the corresponding Kondo behaviour is also influenced. The f-level spectral function reveals both the presence of Landau levels in the conduction band and the Kondo resonance.