Magnetically Induced Field Effect in Carbon Nanotube Devices

TL;DR

This paper demonstrates that quasi-metallic carbon nanotube devices can function as magnetic field-controlled transistors, with conductance exponentially dependent on magnetic flux, revealing new insights into nanotube-based electronic control.

Contribution

It introduces a novel magnetic field effect in CNT devices, enabling magnetic control of conductance and characterizing nanotube chirality and contact barriers.

Findings

Conductance varies exponentially with magnetic flux.

Chirality and Schottky barrier characteristics are extracted.

Devices operate as magnetic field-effect transistors.

Abstract

Three-terminal devices with conduction channels formed by quasi-metallic carbon nanotubes (CNT) are shown to operate as nanotube-based field-effect transistors under strong magnetic fields. The off-state conductance of the devices varies exponentially with the magnetic flux intensity. We extract the quasi-metallic CNT chirality as well as the characteristics of the Schottky barriers formed at the metal-nanotube contacts from temperature-dependent magnetoconductance measurements.