Study and optimization of ion-irradiated High-Tc Josephson nanoJunctions by Monte Carlo simulations

TL;DR

This paper models and simulates ion-irradiated High-Tc Josephson nanoJunctions to understand inhomogeneities and proposes optimization strategies for improved reproducibility.

Contribution

It introduces a simple model explaining JnJ inhomogeneities and uses Monte Carlo simulations to identify factors affecting device variability.

Findings

Inhomogeneity spread is mainly due to slit width variations.

A universal behavior links irradiation conditions to junction characteristics.

Optimization strategies can improve reproducibility of JnJs.

Abstract

High Tc Josephson nanoJunctions (HTc JnJ) made by ion irradiation have remarkable properties for technological applications. However, the spread in their electrical characteristics increases with the ion dose. We present a simple model to explain the JnJ inhomogeneities, which accounts quantitatively for experimental data. The spread in the slit's width of the irradiation mask is the limiting factor.Monte Carlo simulations have been performed using different irradiation conditions to study their influence on the spread of the JnJ charcateristics. A "universal" behavior has been evidenced, which allows to propose new strategies to optimize JnJ reproducibility.