Spin dependent resonant tunneling through 6 micron diameter double barrier resonant tunneling diode

TL;DR

This paper reports on the fabrication and analysis of a 6-micron diameter spin-dependent resonant tunneling diode based on a paramagnetic semiconductor, demonstrating high-quality tunneling and Zeeman splitting at low temperature.

Contribution

It introduces a novel 6-micron diameter double barrier resonant tunneling diode with spin-dependent properties and provides both experimental and theoretical analysis of its characteristics.

Findings

High-quality resonant tunneling observed at 4.2K

Clear phonon replica in the tunneling spectrum

Giant Zeeman splitting under magnetic field

Abstract

A vertical resonant tunneling diode (RTD) based on the paramagnetic Zn1-x-yMnyCdxSe system has been fabricated with a pillar diameter down to ~ 6 micron. The diode exhibits high quality resonant tunneling characteristics through the electron sub-band of the quantum well at a temperature of 4.2K, where a clear phonon replica was observable in addition to the primary peak. Both peaks show a giant Zeeman splitting in an applied magnetic field. Employing a self-consistent real-time Green's function method, the current-voltage characteristic was simulated, showing good agreement with the measured result.