# Spin coherence of holes in GaAs/AlGaAs quantum wells

## TL;DR

This study investigates hole spin coherence in GaAs/AlGaAs quantum wells, revealing long-lived hole spin coherence up to 650 ps and the effects of temperature and localization on spin dynamics.

## Contribution

It provides detailed measurements of hole spin coherence times and their temperature dependence in p-doped quantum wells, highlighting the role of localization.

## Key findings

- Hole spin coherence times reach up to 650 ps.
- Spin dephasing times depend strongly on temperature.
- Hole localization significantly affects spin dynamics.

## Abstract

The carrier spin coherence in a p-doped GaAs/(Al,Ga)As quantum well with a diluted hole gas has been studied by picosecond pump-probe Kerr rotation with an in-plane magnetic field. For resonant optical excitation of the positively charged exciton the spin precession shows two types of oscillations. Fast oscillating electron spin beats decay with the radiative lifetime of the charged exciton of 50 ps. Long lived spin coherence of the holes with dephasing times up to 650 ps. The spin dephasing time as well as the in-plane hole g factor show strong temperature dependence, underlining the importance of hole localization at cryogenic temperatures.