# Reexamination of spin decoherence in semiconductor quantum dots from equation-of-motion approach

## TL;DR

This paper reexamines spin decoherence times in semiconductor quantum dots using an equation-of-motion approach, considering various mechanisms and their relative contributions across different conditions.

## Contribution

It provides a comprehensive analysis of spin decoherence mechanisms in quantum dots, including spin-orbit coupling effects, using both Markovian and non-Markovian approaches.

## Key findings

- Spin-orbit coupling significantly affects decoherence times.
- Dephasing can be more efficient than relaxation at high temperatures.
- Equation-of-motion approach is essential for large level systems at high temperature.

## Abstract

The longitudinal and transversal spin decoherence times, $T_1$ and $T_2$, in semiconductor quantum dots are investigated from equation-of-motion approach for different magnetic fields, quantum dot sizes, and temperatures. Various mechanisms, such as the hyperfine interaction with the surrounding nuclei, the Dresselhaus spin-orbit coupling together with the electron--bulk-phonon interaction, the $g$-factor fluctuations, the direct spin-phonon coupling due to the phonon-induced strain, and the coaction of the electron--bulk/surface-phonon interaction together with the hyperfine interaction are included. The relative contributions from these spin decoherence mechanisms are compared in detail. In our calculation, the spin-orbit coupling is included in each mechanism and is shown to have marked effect in most cases. The equation-of-motion approach is applied in studying both the spin relaxation time $T_1$ and the spin dephasing time $T_2$, either in Markovian or in non-Markovian limit. When many levels are involved at finite temperature, we demonstrate how to obtain the spin relaxation time from the Fermi Golden rule in the limit of weak spin-orbit coupling. However, at high temperature and/or for large spin-orbit coupling, one has to use the equation-of-motion approach when many levels are involved. Moreover, spin dephasing can be much more efficient than spin relaxation at high temperature, though the two only differs by a factor of two at low temperature.